EBAC/RCI acquisition

EBAC/RCI acquisition

The lowest noise Electron Beam Absorbed Current (EBAC) and Resistive Contrast Imaging (RCI)

Characterize interconnects with the highest resolution

  • Reveal electrical integrity of nets with sub-micron resolution
  • Diagnose contamination, metal patterning defects, resistive interconnectors
  • Directly isolate defects to exact layer and die location

Find exact location of any open, resistive or shorting defect

  • Localize metal line cuts caused by cracking, corrosion, electro-migration or foreign particles
  • Identify resistive opens caused by interface contamination at vias
  • Pinpoint location for direct TEM lamella FIB preparation

Verify device operation models with built-in biasing for voltage contrast

  • Image bias/voltage contrast in delayered devices
  • Monitor operation of devices under bias
  • Compare imaged behaviour with device design

Localize defects in thin dielectric layers

  • Visualize weaknesses in GOX or COX before breakdown
  • Pinpoint oxide shorts caused by ESD or EOS with sub-micron resolution
  • Preserve the original defect with nW power dissipation during analysis

Access failures invisible in voltage contrast

  • Find low resistances that allow charge tunnelling through interconnects
  • Investigate structures in contact with the silicon substrate
  • Characterize large metal structures