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UID:df58ad1b3a25ce6319855d573795751d
DTSTAMP:20261008T171555Z
SUMMARY:Low noise STEBIC on low resistive samples
DESCRIPTION:Our talk at ISTFA 2026 presents a novel solution for low-noise 
 STEM EBIC measurements on low-resistive samples. While STEM EBIC offers di
 rect access to internal electric fields and device parameters like minorit
 y carrier diffusion length and depletion region width\, sample preparation
  is challenging. Structural defects (amorphous layers\, metal redeposition
 \, ion implantation) create parasitic resistances that increase low-freque
 ncy noise in STEM EBIC measurements. Our novel preamplifier module enables
  reliable measurements even on lamellae with low parallel resistance\, red
 ucing time-consuming iterative preparation and minimizing overall effort.\
 n\nOur contact: info@pointelectronic.de\n\n René Hammer (Product Manager 
 / Scientist)
URL:https://www.pointelectronic.de/en/company/events/istfa-2026/
DTSTART;TZID=America/North_Dakota/Center:20261008T105000
DTEND;TZID=America/North_Dakota/Center:20261008T115000
LOCATION:ISTFA 2026\, San Antonio\, Henry B. Gonzalez Convention Center
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