Add-ons/Options
Basic BSE detector
Flexible and affordable four-quadrants BackScattered Electron (BSE) detector
Benefits
- Map changes in atomic number/Z-contrast across the sample
- Reveal grains of different orientations
- Distinguish between materials and topographic contrast
- Identify features for advanced analytical techniques
- Produce colour images by mixing multiple signals
- Measure height with the optional topograhic shape-from-shadow reconstruction
Features
- In situ preamplification for minimum noise and maximum speed
- Hybrid chips-on-board design for low cost and flexible construction
- Simmultaneous four channels for topographic/compositional contrast
Specifications
- Sensor type: optics-grade Si diodes
- Sensor mount: 4x chips on ceramic board
- Sensor size: 5x5 or 10x10 mm rectangular
- Sensor sensitivity: 5 kV minimum acceleration voltage
- Sensor size: 25 mm outer diameters, 1.2 mm height
- Pre-amplifier mount: 4x in situ channels
- Pre-amplifier gain: 10^6, 10^7 or 10^8 V/A gain (factory configurable)
- Pre-amplifier size: 18 mm width, 22 mm lenght
- Electrical feedthrough: 10-pin LEMO
- Electrical connector: D-Sub 9-pin (factory configurable)
- Detector speed: 8 µs minimum dwell time
- Detector mount: pole-piece or insertion/retraction mechanism
