Basic BSE detector

Flexible and affordable four-quadrants BackScattered Electron (BSE) detector


  • Map changes in atomic number/Z-contrast across the sample
  • Reveal grains of different orientations
  • Distinguish between materials and topographic contrast
  • Identify features for advanced analytical techniques
  • Produce colour images by mixing multiple signals
  • Measure height with the optional topographic reconstruction


  • In situ preamplification for minimum noise and maximum speed
  • Hybrid chipson-board design for low cost and flexible construction
  • Simultaneous four channels for topographic/compositional contrast


  • Sensor type: opticsgrade Si diodes
  • Sensor mount: 4x chips on ceramic board
  • Sensor size: 5x5 or 10x10 mm rectangular
  • Sensor sensitivity: 5 kV minimum acceleration voltage
  • Detector size: 25 mm outer diameters, 1.2 mm height
  • Preamplifier mount: 4x in situ channels
  • Preamplifier gain: 10^6, 10^7 or 10^8 V/A gain (factory configurable)
  • Preamplifier size: 18 mm width, 22 mm length
  • Electrical feedthrough: 10pin LEMO
  • Electrical connector: DSub 9-pin (factory configurable)
  • Detector speed: 8 µs minimum dwell time
  • Detector mount: polepiece or insertion/retraction mechanism