Premium BSE detector

Highest performance four-quadrants BackScattered Electron (BSE) detector


  • Navigate with live BSE imaging to localise grains of specific composition or crystallographic orientation
  • Image coating free surfaces by reducing charging with high scanning speeds and signal averaging
  • Measure changes in atomic number/Z-contrast across the sample
  • Distinguish between materials and topographic contrast
  • Produce colour images by mixing multiple signals
  • Measure height with the optional topographic reconstruction


  • Dedicated Si sensors for highest speed, down to 10 ns/pixel
  • Improved low-kV sensitivity, down to 1 kV accelerating voltage
  • In situ preamplification for minimum noise and maximum speed
  • Simultaneous four channels for topographic/compositional contrast


  • Sensor type: detector-grade 4Q Si diode
  • Sensor mount: 1x sensor chip on ceramic PCB
  • Sensor inner hole: 5, 2 or 1 mm diameter
  • Sensor size: 12 or 9 mm outer diameter
  • Sensor sensitivity: 1kV minimum acceleration voltage
  • Pre-amplifier mount: 4x in situ channels
  • Pre-amplifier gain: 10^5 or 10^6 V/A gain
  • Electrical feedthrough: 10pin LEMO, for pole-piece mount only
  • Electrical connector: DSub 9-pin (factory configurable)
  • Detector speed: 10ns minimum dwell time
  • Detector mount: pole-piece mount or with insertion/retraction mechanism