Electron Beam Induced Resistance Change (EBIRCh) is an Electrical Analysis technique used in failure analysis to localise weaknesses in semiconductor devices. The technique works by forcing a current through the probed structure using a voltage source (bias) and by detecting locations where the electron beam is able to change the resulting current (measured resistance).

EBIRCh is not a charge collection technique, as the absorbed current plays no role in the resulting contrast, but it may still be considered a specimen current technique as it measures the current from the specimen. It is therefore complementary to the EBIC and EBAC/RCI techniques.