Electrical Analysis for TEM

Electrical analysis in TEM plays a vital role in advancing materials science, nanotechnology, device development and failure analysis, offering insights into the behavior and properties of nanoscale materials and devices.

The system is fully integrated and software controlled and compatible with all TEMs with an external scan interface. All amplification and acquisition settings are software controlled. And each signal is automatically quantified and displayed in current values (µA, nA, pA).

The system consists of hardware, software and selectable options.


  • Inelastic loss induces electron-hole pairs in the lamella
  • Internal electric fields separate electrons and holes
  • Current is measured to acquire EBIC STEM images

Internal electric fields

  • Map junctions and contacts in devices
  • Validate doping profiles against design
  • Correlate with device model and parameters

Electrical layer activity

  • Localize sites with increased recombination activity
  • Distinguish defects with/without electrical activity
  • Continue with high-resolution techniques

Parameter determination

  • Depletion width at junctions
  • Diffusion length of minority carriers
  • Recombination strength of dislocations

FIB sample screening

  • Apply standard FIB workflows for in-situ biasing
  • Use wide field-of-view of EA in SEM to select target
  • Verify lamellas in SEM for preparation damage